EDGE is currently the most widely used standard for data communications in mobile phones. Its proliferation, supported by its backward compatibility with GSM, has led to a need for low-cost EDGE mobile solutions. The implementation of RF circuits on the nanoscale digital CMOS process with no or minimal process enhancements is one of the key obstacles limiting the complete single-chip integration of cellular radio functionality with digital baseband for mass production. The key challenges for the RF integration in nanoscale CMOS include non-linearity of devices and circuits, device mismatches, process parameter spread, and the increasing potential for self-interference that could be induced by one function in the SoC onto another.
The presented transmitter is part of a fully-compliant EDGE SoC and successfully overcomes these challenges at low cost. It is the first to successfully demonstrate a truly fully-digital implementation for the amplitude modulation (AM) path that meets the strict far-out spectral mask limits without requiring an external SAW filter. The all-digital AM path complements the previously reported all-digital phase-modulation (PM) path in a GSM transmitter [1, 2]. The small-signal digital power amplifier (DPA), which realizes the digital modulation of the carrier’s envelope in the polar transmitter, incorporates a sigma-delta dithering module to enhance its digital-to-analog conversion resolution well beyond the 1024-level offered by its segmented thermometer transistor array. Sophisticated signal processing and filtering are applied to ensure that the noise is shaped such that it meets the strict requirements of the reception (RX) band. Inevitable impairments in the amplitude modulation circuitry, resulting ...
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...igher level of integration compared to previous work [4].
Figure 7 shows the chip micrograph of the SoC implemented in 65nm digital CMOS. The TX area occupies about 0.5mm2.
Works Cited
[1] R. B. Staszewski et al., “All-digital PLL and GSM/EDGE transmitter in 90nm CMOS,” Proc. of IEEE Solid-State Circuits Conf., pp. 316–317, 600, Feb. 2005.
[2] R. B. Staszewski et al., “A 24mm2 Quad-Band Single-Chip GSM Radio with
Transmitter Calibration in 90nm Digital CMOS,” Proc. of IEEE Solid-State Circuits Conf., pp. 208–209, 607, Feb. 2008.
[3] P Cruise et al., “A Digital-to-RF-Amplitude Converter for GSM/GPRS/EDGE in 90-nm Digital CMOS,” IEEE Radio Frequency Integrated Circuits (RFIC) Symp., pp. 21–24, June. 2005.
[4] H. Darabi et al., “A Fully Integrated Quad-Band GPRS/EDGE Radio in 0.13μm CMOS,” Proc. of IEEE Solid-State Circuits Conf., pp. 206–207, 607, Feb. 2008.
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The ubiquity of silicon chips has been primarily driven by the breadth, and rate of innovation in the semiconductor field over the past fifty years. Every realm of human life has benefited from these advancements, and it is gratifying to know that each of us in the field has played a part, however infinitesimal. However, disruptive innovation in the next ten years will surpass all that we have accomplished in the last fifty years.
Navaratne, D., Beaulieu, A. & Belostotski, L., 2010. Noise figure optimization of a noise-cancelling wide-band CMOS LNA. NEWCAS Conference (NEWCAS), 2010 8th IEEE International.
Introduction: With the advancement in technologies, concentrating on transceivers is increasing. Transceivers operate at various frequencies. The author uses Wilkinson power divider (using three section transmission line transformer) which operates at three different arbitrary frequencies simultaneously to generate the required specifications. This condition of using three different frequencies on contrary to using dual frequencies makes this /or made this paper publishable. This circuit operates in the frequency range 900 MHz - 2.3 GHz.
The digital signal is different from the analog waveform by having a series of discrete pluses which represent one and zero bits.
Abstract---The metal–oxide–semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is a type of transistor used for amplifying or switching electronic signals .It is a four-terminal device with source (S), gate (G), drain (D), and body (B) terminals. The MOSFET generally uses silicon as semiconductor choice but lately chemical compound os silicone and germanium (SiGe) has started in MOSFET channels. These conventional MOSFET’s were having some
[4] C. Lo, E. Masry, and L. B. Milstein, “Design and Analysis of a Fast Frequency-Hopped DBPSK Communication System, Part I,” IEEE Trans. Commun., Vol. COM-41, pp. 1552-1564, 1993
has been developing a range of "Systems on Chip-SoC" to power their mobile consumer devices. In order to encounter the stern power and space constraints shared to mobile devices, these SoCs associate a central processing unit with other components into a single dense physical package.
“After the integrated circuits the only place to go was down—in size that it. Large scale integration (LS) could fit hundreds of components onto one chip. By the 1980’s, very large scale integration (VLSI) squeezed hundreds of thousands of components onto a chip. Ultra-Large scale integration (ULSI) increased that number into millions. The ability to fit so much onto an area about half the size of ...
Analog communication employs continuous transmission of an electromagnetic wave form that varies in frequency and amplitude.
In the 1980s, first generation (1G) cell phones consisted of voice-only analog devices with limited range and features that were sold mainly in North America. In the 1990s, second generation (2G) devices consisted of voice/data digital cell phones with higher data transfer rates, expanded range, and more features. Sales of these devices expanded to Europe and Asia. In the twenty-first century, Nokia and other companies are combining several digital technologies into third generation (3G) communication devices that reach globally and feature the convergence of the cell phone, personal digital assistant (PDA), Internet services, and multimedia applications.
The explosion of the Analog communications industry has led to many developments in design of transrecievers. The Multi standard transceivers used these days for these systems should be able to operate over a wide frequency range with minimal amounts of duplicated hardware. A very critical element of any type of transceiver is the frequency synthesizer (FS). A special frequency synthesizer i.e. multi-standard frequency synthesizer must be able to synthesize different bands of frequencies for the different wireless standards....
Fig.1 shows the conversion of an electrical to optical. In this laser diode is used which operate at 1550 nm frequency range with 0dbm power. Signal from Laser diode and Electrically data stream i.e. NRZ is incident on an optical modulator (AM Modulator). When the laser and input data are correctly timed, the modulator is either fully ‘on’ or ‘off’ when optical pulses passes through it
Wolf, D. (2013), Qualcomm: Cometh the Reaper, [Online], Available on: http://siliconhutong.com/category/hardware-and-silicon/, (Accessed on 2 March 2014).