Keywords: HfOx dielectrics; Pentacene; Crosslinked organic–inorganic blend dielectric; Organic field effect transistor; Neutral cluster beam deposition method.
In fabricating and characterizing organic-based integrated circuits (ICs), one of the essential circuit components is organic field-effect transistors (OFETs). Thin film- based OFETs use crystalline active layers of semiconducting π-conjugated organic and polymeric solids formed b...
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...electric-coated heavily n-doped Si substrates using a shadow mask (0.5 × 0.5 mm2). The capacitances of the HfOx and CLHB dielectrics were measured using an impedance analyzer (HP4284A), and the thicknesses were measured using ellipsometry (Rudolph Co.) and an alpha-step surface profile monitor (Tencor Co.). The morphology and crystallinity of the pentacene layers deposited on the various dielectrics were examined using an atomic force microscopy (AFM: PSI Co.) and X-ray diffraction (XRD: Rigaku Co.), respectively. The contact angles were investigated using a contact-angle goniometer (Kyowa Interface Science Co.). The leakage current density of the HfOx and CLHB dielectrics and current–voltage (I–V) characteristics of the OFETs were measured using an optical microscope probe station attached to an HP4145A semiconductor parameter analyzer under ambient conditions.
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