si

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The extensive use of graphene in recent decades has contributed to an increasing of nanoelectronic devices [1-7]. A freestanding single layer of carbon atoms arranged in a honeycomb lattice allows high mobility electron to propagate (in-plane) without scattering in a submicron distance [r4 r26 r28-31]. However, in practical applications, graphene properties always suffer from impurities or unintentionally doping by the underlying substrate (metal or insulator), causing the scattering [r4] and altering its intrinsic properties [][]. Vacuum is an ideal medium for charge carrier transport, allowing free scattering events, resulting in high speed device and best quality signal [8, 9, 10]. Without the need for sophisticated preparation techniques, MOS with vacuum channel can provide the ballistic electron transport by exploiting the advantage of Coulombic repulsion of 2-dimensional electron gas (2DEG) induced at the SiO2/Si interface that can easily emit into void (air) channel at low voltage (< 1V) [11-12], in conjunction with whose channel length designed to be less than mean free path ...

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