Indium Nitride Case Study

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Indium nitride (InN) is the member of III-V nitride group along with the GaN and AlN. Among these, InN has superior electronic properties such as high mobility and high drift velocity, as compared to other nitrides because of its low effective electron mass. In addition to this, InN has shown an overshoot in the saturation velocity. Because of this reason InN is considered as a future high-speed electronic device material. However, InN has been a less studied material as compared to other nitrides because of the difficulties in growing it as a high-quality crystalline material. Inherent properties of InN like low decomposition temperature and high equilibrium pressure of N hinders the realization the high-quality material. In addition, InN…show more content…
However, the vibrational properties of InN studied using Raman spectroscopy are very much controversial despite how much they have studied. The controversies in the Raman spectroscopic studies of InN surround the phonon structure of the longitudinal optical (A1(LO)) mode. Being polar and degenerate semiconductor, the electric field associated with the LO phonons strongly interacts with the carrier concentration through the Fröhlich interaction, leading to the observation of plasmon-phonon coupling modes in the Raman spectrum. Carrier density and excitation dependent studies are inevitable for understanding the phonon structure of InN in near resonance and off-resonance…show more content…
So far, the most studied plasmonic materials are Au and Ag, which show SPR phenomenon in the infra-red (IR) to the visible region. Even though major studied plasmonic materials are noble metals; however, metal nanoparticles have the limitations because of the plasmonic losses. In this context, metamaterials and semiconductors with sufficiently high carrier density can be the alternative for metallic nanostructures in the field of plasmonics. In case of semiconductors, the SPR frequency can be achieved up to near infrared range. Recently, two dimensional (2D) plasmons generated a lot of curiosity because of its terahertz (THz) resonance frequency. In case of 3D plasmonic material, the plasmon frequency (p) is scaled with the square root of carrier density of the system. On the other hand, p depends on the in-plane wave vector as well as areal carrier density in case of the 2D plasmonics. 2D plasmons can also be observed in the semiconductor inversion layers such as Si and GaAs. However, materials like InAs, InN possess the inherent SEA which can act as a 2D electron gas. InN nanostructures can act as a 3D and 2D plasmonic material because of being a degenerate semiconductor along with the surface electron accumulation. The 2D
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