The AC electrical characterization of Au/porous silicon/p-Si structures is presented. The low porosity Porous Silicon layers were prepared by electrochemical etching in p-type silicon <100> with two resistivities. The AC electrical measurements capacitance – conductance – frequency were performed from 5Hz to 10MHz, at room temperature in the DC range of ± 2V. We studied two structures; first a conductor type Au/PS/Au and second diode type Au/PS/p-Si/Al.
Using silicon wafers p-Si as starting material and electrochemical anodizing process permit to obtained commonly a nanostructured semiconductor material [1,2]. The material produced is known as Porous silicon (PS) [3,4]. In order to investigate its electrical properties, two main porous silicon structures are formed by a p-Si wafer; the first structure is between two metal electrodes on top, usually aluminum [5,6] or gold [7,8]. Thus, the structure produced it’s a conductor type (metal/PS/metal). The second structure formed it’s a diode type (metal/PS/p-Si/metal), these structures are in type p crystalline silicon [2,9].
Measurement of AC electrical characterization is im-portant for dielectric characterization of materials. This characterization technique permits to separate the dielectric permittivity properties corresponding to the capacitances present in the relaxation region in the porous silicon layers [10,11]. The AC dielectric analysis is interpreted in terms of the admittance or impedance measurement and the equivalent electrical circuits are formed by RC networks in parallel [12,13], connected in series with an inductance [7,14] or capacitance [9,10].
In relation to the electrical properties of PS structures under forward and reverse bias conditions two main trends ...
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Physical Chemistry Laboratory Manual, Physical Chemistry Laboratory, Department of Chemistry, University of Kentucky, Spring 2006.
...hborhood, additive CA are ideally suited for V LSI implementation. Different applications ranging from V LSI test domains to the design of a hardwired version of different CA based schemes have been proposed.
Polman, H., Orobio De Castro, B. & Van Aken, M. A.G. (2008). Experimental Study of the
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David and John Free. (26 Nov 2006). MadSci Network: Chemistry. Retrieved on March 6, 2011, from http://www.madsci.org/posts/archives/2007-02/1171045656.Ch.r.html
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HEactive research on the solar energy harvesting is nowdirected towards the use of antenna coupled Metal InsulatorMetal (MIM) diodes [1-4]. The nano-antenna, confines a highlylocalized field in the gap between the two metals, and the MIMdiode, rectify the incident electromagnetic
Although Solar Energy is a flexible source of where energy could be directly or indirectly converted into forms of energy, it’s still not perfect. With its inefficiency, scientists are trying to find alternative solution to store solar cells for as long as possible. The main process of capturing solar energy happens at the nanoscale. With solar cells, it gets more efficient the tinier it gets. The converting rate of solar energy is equally price competitive as fossil fuel, with a dollar per watt of solar energy. With the help of nanotechnology, it could help raise solar energy conversion efficiency and help lower costs making it the ultimate method of raw energy conversion. To make sure the process of generating energy is kept at a low cost and energy output...
Mann, M., 2013. Mind Action Series Physical Sciences 12 Textbook and Workbook. Sanlamhof: Allcopy Publishers.
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As a graduate student, I will undertake research and coursework in Electrical Engineering to enhance my competencies in this field. I intend to complete my master's degree in order to pursue my doctorate. The research that I am most interested in pursuing at Northeastern University surrounds the optical properties of MEMS devices, and the development of substrate-based fast electro-optical interfaces. My interest in this area stems from my undergraduate study in MEMs development for tri-axial accelerometers.
Plontke, R. (2003, March 13). Chemnitz UT. TU Chemnitz: - Technische Universität Chemnitz. Retrieved April 1, 2014, from http://www.tu-chemnitz.de/en/
As a result, potential difference is developed between the upper and bottom surface of the p-type semiconductor. In p-type semiconductor, the electric field is primarily produced due to the positively charged holes. So the hall voltage produced in p-type semiconductor is
A lot more particularly, 8 Ohms regulation states which the R in this relation will be steady, self-governing of current. The SI unit with regards to measuring a current is ampere that flows of electric charges by the way of exterior on the rate of merely one coulomb every second. Electric current can be calculated using an ammeter. The abbreviation of AC and DC are often used to mean simply alternating and direct current. Direct current is the unidirectional flow of electric charge. Direct current is made by source like batteries thermocouples, solar cells and commutator –type electric equipments of the dynamo sort. Direct current may flow inside a conductor, for example a wire , but also can flow through semiconductors, insulators, or may be through vacuum pressure as in electron as well as ion cross-bow supports The electric charge flows inside a constant course, unique the idea from alternating current(AC). A term formally useful for direct current was galvanic present.