As it has been recognized previously in the first memo Silicon Nitride (Si3N4) is manufactured by using Low Pressure Chemical Vapor Deposition. OSU’s Virtual CVD reactor is an apparatus demonstrating the growth and measurements of Silicon Nitride. It might be essential not to just manufacture Silicon Nitride, instead, to produce it in a high quantity and quality spending the least amount of money as possible. In order to manufacture this type of aforementioned Silicon Nitride, it is required to set proper measurements to pressure, the flow rate of ammonia and dichlorosilane, time and 5 zones of temperature which have dimensions such as 200mtorr, 1000sccm for ammonia and 160sccm for dcs, 120-140 minutes and 700-800 ̊̊̊C respectively. In addition, one of the main aims is to have Silicon Nitride of 750 Å thickness which is tested by using equipment called a Virtual ellipsometer. Also the spaces among wafers should be 6.35 mm and the furnace has 200 wafers which have dimension of 300mm each. The objective of this memo is to attempt to define an ideal “recipe” for producing Si3N4 by setting proper measurements in order to gain the Silicon Nitride of high quality and quantity.
One of the 9 parameters that should be adjusted is the deposition time. The initial reaction time could be varied between 120 and 140 minutes. The deposition time strongly affect the thickness of silicon nitride wafers, there is a linear dependence between deposition time and thickness. (Velasko A.A, 2002) In addition to this, when the deposition time is increased and flow rate is decreased; there is an increase in thickness. (Velasko A.A, 2002) Controlled temperature and time provide better uniformity in the thickness. It means, that with an increase in time, ...
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.... The Science and Engineering of Microelectronic Fabrication. New York: Oxford University Press
Koretsky, M. 2006. Experimental learning of design of experiments using a virtual CVD reactor. American Society for Engineering Education. http://www.connellybarnes.com/work/publications/2006_asee_vcvd_paper.pdf (accessed November 9, 2011).
Tonnberg, S. 2006. Optimisation and characterization of LPCVD silicon nitride thin film growth. M.Sci diss., Chalmers University of Technology. http://publications.lib.chalmers.se/records/fulltext/18906.pdf (accessed November 8, 2011).
Velasco, A. 2002. Parametric and Kinetic Study of Silicon Nitride Film Deposition on Silicon Wafer by Low Pressure Chemical Vapor Deposition (LPCVD) Method. Philippine Engineering Journal 23(1): 59-76. http://journals.upd.edu.ph/index.php/pej/article/viewFile/2383/2267 (accessed November 8, 2011)
to get an idea of how I would do my real experiment and what apparatus
= I have decided to produce a step-by-step guide for each experiment. just to ensure that when we actually come to conducting the practical work, it runs flawlessly. This will also help us conduct fairer tests. as we will be following the same set of steps each time we collect a result.
[8] Freud, R., Harari, R., Sher, E., 2009, “Collapsing Criteria for Vapor Film around Solid Spheres as a Fundamental Stage Leading to Vapor Explosion,” Elsevier B.V., Nuclear Engin.and Design (239), pp. 722-727
Planning Firstly here is a list of equipment I used. Boiling tubes Weighing scales Knife Paper towels 100% solution 0% solution (distilled water) measuring beakers potato chips Cork borer. We planned to start our experiment by doing some preliminary work. We planned to set up our experiment in the following way.
Baudrillard, Jean. "Simulacra and Simulations." Jean Baudrillard, Selected Writings, ed Mark Poster. Stanford University Press, 1998, pp.166-184.
Thin = less than about one micron (10,000 Angstroms - 1000 nm) Film = layer of material on a substrate.
The experiment was built in order to test our abilities to efficiently and correctly execute a separation of mixtures through deep brainstorming and teamwork.
Contents Page Section 3 ……………… …………………… Introduction 3 ……………… …………………… The Pioneers of the Electronic Age 4 ……………… …………………… The Theory of the Synthesiser 5 ……………… …………………… Other Changes Due to Electronic Technology 6 ………………
We gauged the amount of mass that the fuel lost when raising the temperature of water 20 degrees C. Throughout the experiment we constantly worked with chemicals, boiling water, and liters, turning the Bunsen burners on and off. Because of this, each member of our group were carefully to wear goggles, gloves, a lab coat, and closed toed shoes, with pants down to the ankles. We also cautiously recalled the safety quiz with the locations for the shower and eye flusher in order to make sure we were prepared in case we required their use. Learning to remember these skills grew our knowledge and helped us be cautious for labs to come when working with dangerous
There are number of methods to fabricate MEMS like silicon surface micromachining, silicon bulk machining, electro discharge machining, LIGA (in German, Lithographie, Galvanoformung(Electro Plating), Abformung(Injection Moulding)) .Only silicon surface micromachining is discussed here.
I will also be looking at more complex concepts and ideas such as Reynolds's number, the effect of temperature on viscosity and liquid density, which we have not met in last year's course. The areas I will be looking into are as follows: 1) The effect of the Pipe Diameter on flow rate. - the effect of Pipe Diameter on liquid flow (turbulent/laminar) 2)
As the pressure drop increases in the column, it is observed that the degree of foaming becomes more violent and more spread out. When the pressure drop is relatively high, it means that the pressure exerted by the vapour is insufficient to hold up the liquid in the tray, causing the gas bubbles to appear on top of the sieve trays. To add on, the higher the pressure drop, the higher the velocity of the vapour passing up the column. As a result, more vapour will penetrate the liquid and more bubbles formation is observed. Due to more bubbles formation, the degree of foaming are more agitated, rapid and spread out.
Alford, Terry L., L. C. Feldman, and James W. Mayer. Fundamentals of Nanoscale Film Analysis. New York: Springer, 2007. Print.
Researchers at North Carolina State University have fabricated a new compound, Strontium tin oxide (Sr3SnO). Sr3SnO is a dilute magnetic semiconductor, which can be integrated into silicon chips. Researchers could not effectively integrate the other dilute magnetic semiconductors materials on a silicon substrate. This is needed so that they can be used in smart devices. The researchers synthesized Strontium tin oxide (Sr3SnO), as an epitaxial thin film on a silicon chip. Transistors operating at room temperature based on magnetic fields instead of electrical currents could be developed using Sr3SnO [5].
Chemical Vapour Deposition (CVD) are manufactured by many companies including one called Element Six, these artificial diamonds are used in a wide range of technology such as; electronic, sensors, lasers and in thermal management. They are constructed in a vacuum system that allows that is below the average atmospheric pressure. Methane gas then supplies the carbon atoms needed for this process. Because they are able to control the purity of the gas it makes the CVD method a very effective way to make artificial diamonds.