Comparison between MOSFET And UTB SOI MOSFET
Anuj Singh1, Abhisek Gupta1 , Gavish1
1Dronachraya college of Engineering, Gurgaon, India
Abstract---The metal–oxide–semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is a type of transistor used for amplifying or switching electronic signals .It is a four-terminal device with source (S), gate (G), drain (D), and body (B) terminals. The MOSFET generally uses silicon as semiconductor choice but lately chemical compound os silicone and germanium (SiGe) has started in MOSFET channels. These conventional MOSFET’s were having some
drawbacks like leakage paths. This Drawback is eliminated using the UTB structure which is abbreviated form of Ultrathin-Body MOSFET. Further it can be
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Because these two terminals are normally connected to each other (short-circuited) internally, only three terminals appear in electrical diagrams. The MOSFET is by far the most common transistor in both digital and analog circuits, though the bipolar junction transistor was at one time much more common. Circuit Symbol of MOSFET is as …show more content…
deep source/drain regions and ultra thin channel and dielectric insolating layer respectively) which presents it as promising structure for ultimate transistor device.But UTB structure has its disadvantage too like strong coupling effect between front and back interfaces and channel quantization effect.
2. Structure
MOSFET : A metal–oxide–semiconductor field-effect transistor (MOSFET) is based on the modulation of charge concentration by a MOS capacitance between a body electrode and a gate electrode located above the body and insulated from all other device regions by a gate dielectric layer which in the case of a MOSFET is an oxide, such as silicon dioxide. If dielectrics other than an oxide such as silicon dioxide (often referred to as oxide) are employed the device may be referred to as a metal–insulator– semiconductor FET (MISFET). Compared to the MOS capacitor, the MOSFET includes two additional terminals
(source and drain), each connected to individual highly doped regions that are separated by the body region. These regions can be either p or n type, but they must both be of the same type, and of opposite type to the body region. The source and drain (unlike the body) are highly doped as signified by a "+" sign after the type of doping. Structure of MOSFET shown in FIG
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